- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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986
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-220-3 FP | + 175 C | Tube | 37 W | Single | 600 V | 2.4 V | 60 A | 250 nA | 20 V | |||
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101
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 520 W | Single | 1200 V | 2.4 V | 120 A | 200 nA | +/- 30 V | |||
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891
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-220 | + 175 C | Tube | 260 W | Single | 600 V | 2.4 V | 60 A | 250 nA | 20 V | |||
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80
In-stock
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IXYS | IGBT Transistors 30 Amps 1200V | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 2.4 V | 60 A | 500 nA | +/- 20 V | |||
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139
In-stock
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IXYS | IGBT Transistors 20 Amps 1200V | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 2.4 V | 38 A | 500 nA | +/- 20 V | |||
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220
In-stock
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Infineon Technologies | IGBT Transistors 600V HI SPEED SW IGBT | Through Hole | PG-TO-247-3 | Tube | 187 W | 600 V | 2.4 V | 60 A | 100 nA | 20 V | |||||
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421
In-stock
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Infineon Technologies | IGBT Transistors IGBT 600V | Through Hole | PG-TO-220-3 | Tube | 170 W | 600 V | 2.4 V | 40 A | 100 nA | 20 V | |||||
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228
In-stock
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Infineon Technologies | IGBT Transistors 600V HI SPEED SW IGBT | Through Hole | PG-TO-247-3 | Tube | 170 W | 600 V | 2.4 V | 40 A | 100 nA | 20 V | |||||
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42
In-stock
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IXYS | IGBT Transistors 30 Amps 1200V | Through Hole | ISOPLUS247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 2.4 V | 50 A | 500 nA | +/- 20 V | |||
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354
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A High Speed Trench Gate IGBT | Through Hole | TO-247 | + 175 C | Tube | 260 W | Single | 600 V | 2.4 V | 60 A | 250 nA | 20 V | |||
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19
In-stock
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IXYS | IGBT Transistors 30 Amps 1200V | Through Hole | ISOPLUS247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 2.4 V | 50 A | 500 nA | +/- 20 V | |||
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7
In-stock
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IXYS | IGBT Transistors 20 Amps 1200V | Through Hole | TO-247-3 | + 150 C | Tube | Single | 1200 V | 2.4 V | +/- 20 V | ||||||
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35
In-stock
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IXYS | IGBT Transistors 30 Amps 1200V | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 1.2 kV | 2.4 V | 60 A | 500 nA | +/- 20 V | |||
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90
In-stock
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onsemi | IGBT Transistors 1350V/40A IGBT FSII TO-24 | Through Hole | TO-247 | + 175 C | Tube | 394 W | Single | 1350 V | 2.4 V | 80 A | 100 nA | 25 V | |||
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980
In-stock
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STMicroelectronics | IGBT Transistors Trench gte FieldStop IGBT 600V 30A | Through Hole | TO-220-3 | + 175 C | Tube | 260 W | Single | 650 V | 2.4 V | 60 A | 250 nA | +/- 20 V | |||
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34
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast Discrete IGBT | Through Hole | TO-247AC-3 | + 150 C | Tube | 400 W | Single | 1200 V | 2.4 V | 90 A | 100 nA | +/- 30 V | |||
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396
In-stock
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Infineon Technologies | IGBT Transistors HI SPEED SWITCHING 600V 30A | Through Hole | PG-TO-220-3 | Tube | 43 W | 600 V | 2.4 V | 18 A | 100 nA | 20 V | |||||
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75
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT | Through Hole | TO-247AC-3 | + 150 C | Tube | 216 W | Single | 1200 V | 2.4 V | 45 A | 100 nA | +/- 30 V | |||
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32
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT | Through Hole | TO-247AC-3 | + 150 C | Tube | 320 W | Single | 1200 V | 2.4 V | 70 A | 100 nA | +/- 30 V |