- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
39 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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446
In-stock
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IR / Infineon | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-220-3 | Tube | 160 W | Single | 600 V | 1.7 V | 49 A | +/- 20 V | |||||
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105
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 833 W | Single | 1.2 kV | 1.7 V | 200 A | 600 nA | 30 V | ||||
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98
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 543 W | Single | 1.2 kV | 1.7 V | 134 A | 600 nA | 30 V | ||||
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GET PRICE |
19,200
In-stock
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Infineon Technologies | IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO I... | Through Hole | TO-247-3 | Tube | 200 W | Single | 1.2 kV | 1.7 V | 57 A | +/- 20 V | ||||
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604
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 10 Amp | Through Hole | TO-220-3 | + 150 C | Tube | 80 W | Single | 600 V | 1.7 V | 20 A | +/- 100 nA | +/- 20 V | |||
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55
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 379 W | Single | 1.2 kV | 1.7 V | 94 A | 600 nA | 30 V | ||||
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70
In-stock
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Infineon Technologies | IGBT Transistors 1200V 140A | Through Hole | TO-247-3 | + 175 C | Tube | 556 W | Single | 1.2 kV | 1.7 V | 140 A | 200 nA | +/- 30 V | |||
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66
In-stock
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Infineon Technologies | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | Through Hole | TO-247AC-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.7 V | 140 A | 100 nA | 20 V | |||
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18
In-stock
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IXYS | IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT | Through Hole | PLUS 247-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.7 V | 290 A | 200 nA | 20 V | |||
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130
In-stock
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IR / Infineon | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | Through Hole | TO-247AC-3 | + 175 C | Tube | 325 W | Single | 650 V | 1.7 V | 90 A | 100 nA | 20 V | |||
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85
In-stock
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Infineon Technologies | IGBT Transistors Fast IGBT 300V 40A Ultra | Through Hole | TO-247-3 | Tube | 180 W | Single | 300 V | 1.7 V | 70 A | +/- 20 V | |||||
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15
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-247-3 | + 150 C | Tube | 379 W | Single | 1.2 kV | 1.7 V | 94 A | 600 nA | 30 V | |||
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26
In-stock
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IXYS | IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT | Through Hole | TO-247AD-3 | + 175 C | Tube | 380 W | Single | 650 V | 1.7 V | 116 A | 100 nA | 20 V | |||
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37
In-stock
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IXYS | IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT | Through Hole | TO-247AD-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.7 V | 116 A | 100 nA | 20 V | |||
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194
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 1.7 V | 160 A | 200 nA | +/- 20 V | |||
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442
In-stock
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onsemi | IGBT Transistors IGBT 1200V 25A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 349 W | Single | 1.2 kV | 1.7 V | 100 A | 200 nA | +/- 20 V | |||
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1,593
In-stock
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onsemi | IGBT Transistors 15A 600V IGBT | Through Hole | TO-220 | Tube | 47 W | 600 V | 1.7 V | 30 A | 100 nA | 20 V | |||||
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74
In-stock
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onsemi | IGBT Transistors 1200V/30A LOW VCE SAT FSII | Through Hole | TO-247 | + 175 C | Tube | 534 W | Single | 1200 V | 1.7 V | 60 A | 200 nA | 30 V | |||
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46
In-stock
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onsemi | IGBT Transistors FSII 75A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 600 V | 1.7 V | 100 A | 200 nA | +/- 20 V | |||
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3,000
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 600 V | 1.7 V | 75 A | +/- 250 nA | +/- 20 V | |||
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575
In-stock
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Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 600 V | 1.7 V | 49 A | +/- 20 V | |||||
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250
In-stock
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Infineon Technologies | IGBT Transistors 1200V DC-1kHz w/ exetended lead | Through Hole | TO-247AD-3 | Tube | 200 W | Single | 1.2 kV | 1.7 V | 57 A | +/- 20 V | |||||
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VIEW | IXYS | IGBT Transistors 650V/290A Trench IGBT GenX4 XPT | Through Hole | TO-264-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.7 V | 290 A | 200 nA | 20 V | |||
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85
In-stock
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IR / Infineon | IGBT Transistors 1200V 108A | Through Hole | TO-247-3 | + 175 C | Tube | 469 W | Single | 1.2 kV | 1.7 V | 130 A | 200 nA | +/- 30 V | |||
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51
In-stock
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IR / Infineon | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | Through Hole | TO-247AD-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.7 V | 140 A | 100 nA | 20 V | |||
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251
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 180 W | Single | 1200 V | 1.7 V | 40 A | 100 nA | 30 V | |||
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70
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 350 W | Single | 1200 V | 1.7 V | 80 A | 300 nA | 30 V | |||
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59
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 305 W | Single | 1200 V | 1.7 V | 60 A | 200 nA | 30 V | |||
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33
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 420 W | Single | 1200 V | 1.7 V | 100 A | 400 nA | 30 V | |||
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60
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 350 W | Single | 1200 V | 1.7 V | 80 A | 300 nA | 30 V |
