PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXLF19N250A	1+ $35.260 5+ $34.900 10+ $32.530 25+ $31.070	PDF RFQ	223 In-stock	IXYS	IGBT Transistors High Voltage IGBT 2500V; 19A	Through Hole	ISOPLUS i4-PAC-3	+ 150 C	Tube	250 W	Single	2.5 kV	3.2 V	32 A	500 nA	+/- 20 V
APT15GT120BRDQ1G	1+ $6.880 10+ $5.530 25+ $5.430 100+ $5.040	PDF RFQ	246 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ...	Through Hole	TO-247-3	+ 150 C		250 W	Single	1.2 kV	3.2 V	36 A	480 nA	30 V
APT25GT120BRDQ2G	1+ $9.250 10+ $8.320 25+ $7.580 50+ $7.060	PDF RFQ	1,862 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ...	Through Hole	TO-247-3	+ 150 C		347 W	Single	1.2 kV	3.2 V	54 A	120 nA	30 V
APT25GT120BRG	1+ $7.320 10+ $6.590 25+ $6.000 100+ $5.420	PDF RFQ	125 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ...	Through Hole	TO-247-3	+ 150 C	Tube	347 W	Single	1.2 kV	3.2 V	54 A	120 nA	30 V