Build a global manufacturer and supplier trusted trading platform.
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGW35HF60W
1+
$2.990
10+
$2.540
100+
$2.200
250+
$2.090
RFQ
10,425
In-stock
STMicroelectronics IGBT Transistors Ultra Fast IGBT 35A 600V Through Hole TO-247 + 150 C Tube 200 W     2.5 V 60 A 100 nA 20 V
IRG4PH50SPBF
1+
$6.010
10+
$5.110
25+
$5.020
100+
$4.430
RFQ
512
In-stock
IR / Infineon IGBT Transistors 1200V DC-1kHz Through Hole TO-247-3 + 150 C Tube 200 W Single 1.2 kV 1.75 V 57 A 100 nA 20 V
STGP35HF60W
1+
$2.780
10+
$2.370
100+
$2.050
250+
$1.950
RFQ
876
In-stock
STMicroelectronics IGBT Transistors 35A Ultrafast IGBT 600V 100kHz Through Hole TO-220 + 150 C Tube 200 W Single 600 V 1.65 V 60 A 100 nA 20 V
IRG4PC50UPBF
1+
$5.220
10+
$4.440
25+
$4.360
100+
$3.850
RFQ
2,410
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-247-3 + 150 C Tube 200 W Single 600 V 2 V 55 A 100 nA 20 V
IRGP6640D-EPBF
1+
$5.290
10+
$4.500
25+
$4.420
100+
$3.900
RFQ
151
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT TO-247 Through Hole TO-247AD-3 + 175 C Tube 200 W Single 600 V 1.65 V 53 A 100 nA 20 V
Page 1 / 1