- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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493
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/40A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 349 W | 600 V | 1.9 V | 80 A | 400 nA | 20 V | ||||
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140
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop RC | Through Hole | TO-247-3 | + 175 C | Tube | 349 W | Single | 1200 V | 1.9 V | 60 A | 100 nA | 20 V | |||
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231
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop RC | Through Hole | TO-247-3 | + 175 C | Tube | 349 W | Single | 1350 V | 2 V | 60 A | 100 nA | 20 V | |||
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265
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 349 W | Single | 1350 V | 2 V | 60 A | 100 nA | 20 V | |||
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45
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop RC | Through Hole | TO-247-3 | + 175 C | Tube | 349 W | Single | 1200 V | 1.9 V | 60 A | 100 nA | 20 V | |||
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437
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V, 40A Field Stop IGBT | Through Hole | TO-3PN | Tube | 349 W | 650 V | 2.5 V | 80 A | 400 nA | 20 V |
