IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IHW20N120R3	1+ $3.360 10+ $2.860 100+ $2.480 250+ $2.350		PDF RFQ	3,080 In-stock	Infineon Technologies	IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body	Through Hole	TO-247-3	+ 175 C	Tube	310 W	Single	1200 V	1.8 V	40 A	100 nA	20 V
	IHW20N120R3FKSA1	1+ $3.360 10+ $2.860 100+ $2.480 250+ $2.350		PDF RFQ	233 In-stock	Infineon Technologies	IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body	Through Hole	TO-247-3	+ 175 C	Tube	310 W	Single	1200 V	1.8 V	40 A	100 nA	20 V