- Manufacture :
- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
360
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600 V 40 A 62.5 W | Through Hole | TO-3PF | + 175 C | Tube | 62.5 W | 600 V | 1.9 V | 40 A | 400 nA | 20 V | ||||
|
|
3,870
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600 V 80 A 79 W | Through Hole | TO-3PF | + 175 C | Tube | 79 W | 600 V | 2.1 V | 80 A | 400 nA | 20 V | ||||
|
|
290
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 52 W | Single | 650 V | 1.55 V | 40 A | 250 nA | 20 V | |||
|
|
300
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 58 W | Single | 650 V | 1.55 V | 60 A | 250 nA | 20 V | |||
|
|
216
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3PF | + 175 C | Tube | 62.5 W | Single | 600 V | 1.8 V | 80 A | 250 nA | 20 V |
