IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	VS-GP300TD60S	1+ $149.800 2+ $146.850 5+ $141.950 10+ $139.410		PDF RFQ	12 In-stock	Vishay Semiconductors	IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT	Chassis	DIAP	+ 150 C	1.136 kW	Dual	600 V	-	580 A	+/- 500 nA	20 V
	VS-GP100TS60SFPBF	1+ $81.390 2+ $79.780 5+ $78.910 10+ $76.440		PDF RFQ	4 In-stock	Vishay Semiconductors	IGBT Transistors Ic 100A Vce(On)1.16V Half Brdge Trench PT	Chassis	INT-A-PAK	+ 150 C	781 W	Dual	600 V	-	337 A	+/- 500 nA	20 V