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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,000
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 10A | SMD/SMT | TO-263-3 | + 175 C | Reel | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | ||||
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744
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 10A | Through Hole | TO-220-3 | + 175 C | Tube | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | ||||
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219
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 10A | Through Hole | TO-220-3 | + 175 C | Tube | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | ||||
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500
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 10A | Through Hole | TO-220-3 | + 175 C | Tube | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | ||||
|
500
In-stock
|
Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 10A | Through Hole | TO-220-3 | + 175 C | Tube | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | ||||
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200
In-stock
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onsemi | IGBT Transistors 600V 12A IGBT TO-3PF | Through Hole | TO-3PF-3L | Tube | 54 W | 600 V | 1.6 V | 24 A | 100 nA | 20 V | ||||||
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VIEW | Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 10A | SMD/SMT | TO-263-3 | + 175 C | Reel | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V |