- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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230
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | ||||
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947
In-stock
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STMicroelectronics | IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop | Through Hole | TO-220-3 | + 175 C | Tube | 167 W | Single | 600 V | 2.2 V | 40 A | 250 nA | 20 V | ||||
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540
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V, 20A Field Stop IGBT | SMD/SMT | D2PAK | Reel | 208 W | 600 V | 2.2 V | 40 A | 400 nA | 20 V | ||||||
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74
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | ||||
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267
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 8A | Through Hole | TO-247-3 | + 150 C | Tube | 70 W | Single | 1200 V | 2.2 V | 16 A | 100 nA | 20 V | ||||
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160
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 8A | Through Hole | TO-247-3 | + 150 C | Tube | 70 W | Single | 1200 V | 2.2 V | 16 A | 100 nA | 20 V | ||||
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20
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 600V/190Amp | Through Hole | TO-247AD | + 150 C | Tube | 830 W | 600 V | 2.2 V | 190 A | 100 nA | 20 V | |||||
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32
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 600V/170Amp CoPacked | Through Hole | TO-264 | + 150 C | Tube | 695 W | 600 V | 2.2 V | 170 A | 100 nA | 20 V | |||||
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210
In-stock
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onsemi | IGBT Transistors 600V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
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169
In-stock
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onsemi | IGBT Transistors 650V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
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2,965
In-stock
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STMicroelectronics | IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar | Through Hole | TO-220-3 | + 150 C | Tube | 75 W | Single | 2.2 V | 14 A | 100 nA | 20 V | |||||
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296
In-stock
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onsemi | IGBT Transistors 1200V/15A IGBT LPT TO-247 | Through Hole | TO-247 | Tube | 156 W | 1200 V | 2.2 V | 30 A | 100 nA | 20 V | ||||||
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386
In-stock
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onsemi | IGBT Transistors 1200V/20A IGBT FSI TO-247 | Through Hole | TO-247 | Tube | 77 W | 1200 V | 2.2 V | 40 A | 100 nA | 20 V |