- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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10,425
In-stock
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STMicroelectronics | IGBT Transistors Ultra Fast IGBT 35A 600V | Through Hole | TO-247 | + 150 C | Tube | 200 W | 2.5 V | 60 A | 100 nA | 20 V | ||||||
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2,910
In-stock
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Infineon Technologies | IGBT Transistors 600V 30A 187W | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 2.5 V | 60 A | 100 nA | 20 V | ||||
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11,800
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | 468 W | Single | 1.2 kV | 2.5 V | 80 A | 250 nA | 20 V | |||||
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2,400
In-stock
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Infineon Technologies | IGBT Transistors 600V 30A 187W | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 2.5 V | 60 A | 100 nA | 20 V | ||||
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61
In-stock
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Infineon Technologies | IGBT Transistors 600V 20A 170W | Through Hole | TO-247-3 | + 175 C | Tube | 170 W | Single | 600 V | 2.5 V | 40 A | 100 nA | 20 V | ||||
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437
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V, 40A Field Stop IGBT | Through Hole | TO-3PN | Tube | 349 W | 650 V | 2.5 V | 80 A | 400 nA | 20 V | ||||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 375 W | Single | 1200 V | 2.5 V | 50 A | 250 nA | 20 V | ||||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 375 W | Single | 1200 V | 2.5 V | 50 A | 250 nA | 20 V | ||||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 259 W | Single | 1200 V | 2.5 V | 30 A | +/- 250 nA | 20 V | ||||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 259 W | Single | 1200 V | 2.5 V | 30 A | +/- 250 nA | 20 V | ||||||
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240
In-stock
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Infineon Technologies | IGBT Transistors 600V 20A 170W | Through Hole | TO-247-3 | + 175 C | Tube | 170 W | Single | 600 V | 2.5 V | 40 A | 100 nA | 20 V | ||||
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VIEW | IXYS | IGBT Transistors 60 Amps 600V | Through Hole | ISOPLUS247 | + 150 C | Tube | 170 W | Single | 600 V | 2.5 V | 75 A | 100 nA | 20 V | ||||
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59
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600volt 50 Amp | Through Hole | ISOTOP-4 | + 150 C | Tube | 260 W | Single Dual Emitter | 600 V | 2.5 V | 50 A | 100 nA | 20 V |