- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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295
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 469 W | Single | 600 V | 1.85 V | 120 A | 250 nA | 20 V | ||||
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2,500
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | SMD/SMT | TO-252-3 | + 175 C | Reel | 75 W | Single | 600 V | 1.85 V | 8 A | 100 nA | 20 V | ||||
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2,500
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop RC | SMD/SMT | TO-252-3 | + 175 C | Reel | 75 W | Single | 600 V | 1.85 V | 8 A | 100 nA | 20 V | ||||
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501
In-stock
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STMicroelectronics | IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop | Through Hole | TO-247-3 | + 175 C | Tube | 260 W | Single | 600 V | 1.85 V | 60 A | 250 nA | 20 V | ||||
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272
In-stock
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Infineon Technologies | IGBT Transistors 600V 50A 333W | Through Hole | TO-247-3 | + 150 C | Tube | 333 W | 600 V | 1.85 V | 100 A | 100 nA | 20 V | |||||
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144
In-stock
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Infineon Technologies | IGBT Transistors 600V Low VCEon Trench IGBT | Through Hole | TO-247AD-3 | Tube | 268 W | 600 V | 1.85 V | 76 A | 100 nA | 20 V | ||||||
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24
In-stock
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STMicroelectronics | IGBT Transistors Trench gate V series 600V 80A HiSpd | Through Hole | TO-247-3 | + 175 C | Tube | 469 W | Single | 600 V | 1.85 V | 120 A | 250 nA | 20 V | ||||
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2,400
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 1.85 V | 50 A | 250 nA | 20 V | ||||
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210
In-stock
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onsemi | IGBT Transistors 600V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 366 W | Single | 600 V | 1.85 V | 80 A | 200 nA | 20 V | ||||
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2,500
In-stock
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Infineon Technologies | IGBT Transistors IGBT w/ INTG DIODE 600V 8A | SMD/SMT | TO-252-3 | + 175 C | Reel | 75 W | Single | 600 V | 1.85 V | 8 A | 100 nA | 20 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 283 W | Single | 1200 V | 1.85 V | 30 A | 250 nA | 20 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 468 W | Single | 1200 V | 1.85 V | 80 A | 250 nA | 20 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 283 W | Single | 1200 V | 1.85 V | 30 A | 250 nA | 20 V | ||||
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597
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.85 V | 50 A | 250 nA | 20 V | ||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 469 W | Single | 600 V | 1.85 V | 120 A | 250 nA | 20 V | ||||
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288
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 468 W | Single | 1200 V | 1.85 V | 80 A | 250 nA | 20 V | ||||
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835
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 258 W | Single | 600 V | 1.85 V | 60 A | 250 nA | 20 V |