IGBT Transistors - Kaimeite

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4 products

PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IKW50N60H3FKSA1		GET PRICE	PDF RFQ	3,500 In-stock	Infineon Technologies	IGBT Transistors HIGH SPEED SWITCHING	Through Hole	TO-247-3	+ 175 C	Tube	333 W	Single	600 V	2.25 V	100 A	100 nA	20 V
IKW50N60H3	1+ $5.220 10+ $4.440 100+ $3.850 250+ $3.650		PDF RFQ	213 In-stock	Infineon Technologies	IGBT Transistors HIGH SPEED SWITCHING	Through Hole	TO-247-3	+ 175 C	Tube	333 W	Single	600 V	2.25 V	100 A	100 nA	20 V
IGW60N60H3	1+ $5.150 10+ $4.380 100+ $3.800 250+ $3.600		PDF RFQ	230 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS TrenchStop	Through Hole	TO-247-3	+ 175 C	Tube	416 W	Single	600 V	2.25 V	80 A	100 nA	20 V
IGW100N60H3	1+ $6.570 10+ $5.940 25+ $5.670 100+ $4.920		PDF RFQ	240 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS TrenchStop	Through Hole	TO-247-3	+ 175 C	Tube	714 W	Single	600 V	2.25 V	140 A	100 nA	20 V

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