PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG4PH50SPBF	1+ $6.010 10+ $5.110 25+ $5.020 100+ $4.430	PDF RFQ	512 In-stock	IR / Infineon	IGBT Transistors 1200V DC-1kHz	Through Hole	TO-247-3	+ 150 C	Tube	200 W	Single	1.2 kV	1.75 V	57 A	100 nA	20 V
AUIRGDC0250	1+ $6.090 10+ $5.170 50+ $5.080 100+ $4.480	PDF RFQ	340 In-stock	IR / Infineon	IGBT Transistors 1200V IGBT 81A Auto 1.37V at 33A Low VCE	Through Hole	TO-220-3		Tube	543 W		1.2 kV	1.57 V	141 A	100 nA	20 V
STGWA40H120DF2	1+ $9.080 10+ $8.210 25+ $7.830 100+ $6.800	PDF RFQ	11,800 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C		468 W	Single	1.2 kV	2.5 V	80 A	250 nA	20 V
STGWA25M120DF3	1+ $9.510 10+ $8.600 25+ $8.200 50+ $7.630	PDF RFQ	597 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	375 W	Single	1.2 kV	1.85 V	50 A	250 nA	20 V