IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IHW30N110R3	1+ $4.140 10+ $3.520 100+ $3.050 250+ $2.900		PDF RFQ	374 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247	+ 175 C	Tube	333 W	Single	1100 V	1.55 V	60 A	100 nA	20 V
	IHW30N110R3FKSA1	1+ $4.140 10+ $3.520 100+ $3.050 250+ $2.900		PDF RFQ	220 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	333 W	Single	1100 V	1.55 V	60 A	100 nA	20 V

IHW30N110R3

IHW30N110R3

Infineon Technologies

IGBT Transistors IGBT PRODUCTS

Stock : 374

1+: $4.140

10+: $3.520

100+: $3.050

250+: $2.900

Default Photo

IHW30N110R3FKSA1

Infineon Technologies

IGBT Transistors IGBT PRODUCTS

Stock : 220

1+: $4.140

10+: $3.520

100+: $3.050

250+: $2.900

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