- Manufacture :
- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
731
In-stock
|
IR / Infineon | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.15 V | 40 A | 100 nA | 20 V | |||
|
|
167
In-stock
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | |||
|
|
309
In-stock
|
Infineon Technologies | IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | |||
|
|
181
In-stock
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | |||
|
|
300
In-stock
|
Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.5 V | 49 A | 100 nA | +/- 20 V | |||
|
|
119
In-stock
|
IR / Infineon | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 1.2 kV | 2.43 V | 41 A | 100 nA | +/- 20 V | |||
|
|
29
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.72 V | 40 A | 100 nA | +/- 20 V |
