PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXXH50N60C3D1	1+ $10.070 10+ $9.100 25+ $8.680 100+ $7.530		PDF RFQ	645 In-stock	IXYS	IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked	Through Hole	TO-247AD	+ 150 C	Tube	600 W		600 V	2.3 V	100 A	100 nA	20 V
IKW50N60H3FKSA1		GET PRICE	PDF RFQ	3,500 In-stock	Infineon Technologies	IGBT Transistors HIGH SPEED SWITCHING	Through Hole	TO-247-3	+ 175 C	Tube	333 W	Single	600 V	2.25 V	100 A	100 nA	20 V
IKW50N60H3	1+ $5.220 10+ $4.440 100+ $3.850 250+ $3.650		PDF RFQ	213 In-stock	Infineon Technologies	IGBT Transistors HIGH SPEED SWITCHING	Through Hole	TO-247-3	+ 175 C	Tube	333 W	Single	600 V	2.25 V	100 A	100 nA	20 V
IGW50N60H3	1+ $4.620 10+ $3.920 100+ $3.400 250+ $3.230		PDF RFQ	272 In-stock	Infineon Technologies	IGBT Transistors 600V 50A 333W	Through Hole	TO-247-3	+ 150 C	Tube	333 W		600 V	1.85 V	100 A	100 nA	20 V
APT45GP120BG	1+ $19.780 10+ $17.980 25+ $16.630 50+ $15.730		PDF RFQ	22 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C	Tube	625 W	Single	1.2 kV	3.3 V	100 A	100 nA	30 V
IXXH50N60C3	1+ $7.780 10+ $7.040 25+ $6.710 100+ $5.830		PDF RFQ	20 In-stock	IXYS	IGBT Transistors XPT IGBT C3-Class 600V/100 Amp	Through Hole	TO-247AD	+ 150 C	Tube	600 W		600 V	2.3 V	100 A	100 nA	20 V
APT75GP120B2G	1+ $25.590 5+ $24.440 10+ $23.680 25+ $21.760		PDF RFQ	100 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	T-MAX-3	+ 150 C		1.042 kW	Single	1.2 kV	3.3 V	100 A	100 nA	30 V