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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4BC30UPBF
1+
$2.230
10+
$1.900
100+
$1.520
500+
$1.330
RFQ
1,723
In-stock
Infineon Technologies IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT Through Hole TO-220-3 + 150 C Tube 100 W Single 600 V 2.1 V 23 A 100 nA +/- 20 V
IRG4BC30UDPBF
1+
$3.350
10+
$2.850
100+
$2.470
250+
$2.340
RFQ
229
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-220-3 + 150 C Tube 100 W Single 600 V 1.95 V 23 A 100 nA +/- 20 V
IRG4BC30W-SPBF
1+
$2.460
10+
$2.090
100+
$1.670
250+
$1.580
RFQ
349
In-stock
Infineon Technologies IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT SMD/SMT D-PAK-3 + 150 C Tube 100 W Single 600 V 2.1 V 23 A 100 nA +/- 20 V
IRGB4615DPBF
1+
$2.660
10+
$2.260
100+
$1.810
250+
$1.720
RFQ
375
In-stock
IR / Infineon IGBT Transistors 600V TRENCH IGBT ULTRAFAST Through Hole TO-220AB-3 + 175 C Tube 99 W Single 600 V 2 V 23 A 100 nA +/- 20 V
IRGS4615DPBF
1+
$2.800
10+
$2.380
100+
$1.900
250+
$1.810
RFQ
5
In-stock
IR / Infineon IGBT Transistors 600V TRENCH IGBT ULTRAFAST SMD/SMT TO-263-3 + 175 C Tube 99 W Single 600 V 2 V 23 A 100 nA +/- 20 V
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