- Manufacture :
- Mounting Style :
- Package / Case :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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800
In-stock
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Infineon Technologies | IGBT Transistors 600V Low-Vceon | Through Hole | TO-220FP-3 | + 175 C | Tube | 38 W | Single | 600 V | 1.8 V | 11 A | 100 nA | +/- 20 V | ||||
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800
In-stock
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Infineon Technologies | IGBT Transistors 600V 10A | SMD/SMT | TO-263-3 | + 175 C | Reel | 63 W | Single | 600 V | 11 A | 100 nA | +/- 20 V | |||||
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346
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH ULTRAFAST IGBT | SMD/SMT | DPAK-3 | + 175 C | Tube | 58 W | Single | 600 V | 1.75 V | 11 A | 100 nA | 20 V | ||||
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519
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Through Hole | TO-220AB-3 | + 175 C | Tube | 58 W | Single | 600 V | 2.2 V | 11 A | 100 nA | +/- 20 V |