- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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167
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 156 W | Single | 1.2 kV | 1.5 V | 30 A | 100 nA | +/- 20 V | |||
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43
In-stock
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IXYS | IGBT Transistors 75Amps 600V | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | 600 V | 1.5 V | 75 A | 100 nA | +/- 20 V | ||||
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201
In-stock
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IXYS | IGBT Transistors 120Amps 600V | Through Hole | PLUS 247-3 | + 150 C | Tube | 780 W | Single | 600 V | 1.5 V | 280 A | 100 nA | +/- 20 V | |||
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300
In-stock
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Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | + 150 C | Tube | 160 W | Single | 600 V | 1.5 V | 49 A | 100 nA | +/- 20 V | |||
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GET PRICE |
2,000
In-stock
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IXYS | IGBT Transistors 72 Amps 600V | Through Hole | PLUS 247-3 | + 150 C | Tube | 540 W | 600 V | 1.5 V | 75 A | 100 nA | +/- 20 V | |||
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90
In-stock
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IXYS | IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT | Through Hole | TO-247AD-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.5 V | 120 A | 100 nA | 20 V | |||
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44
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 231 W | Single | 1.2 kV | 1.5 V | 50 A | 100 nA | +/- 20 V | |||
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30
In-stock
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IXYS | IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT | Through Hole | ISOPLUS 247-3 | + 150 C | Tube | 400 W | 600 V | 1.5 V | 145 A | 100 nA | +/- 20 V |
