PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT25GP120BDQ1G	1+ $12.780 10+ $11.620 25+ $10.740 50+ $10.160	PDF RFQ	72 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C		417 W	Single	1.2 kV	3.3 V	69 A	100 nA	30 V
APT45GP120BG	1+ $19.780 10+ $17.980 25+ $16.630 50+ $15.730	PDF RFQ	22 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C	Tube	625 W	Single	1.2 kV	3.3 V	100 A	100 nA	30 V
APT45GP120B2DQ2G	1+ $20.630 5+ $19.710 10+ $19.090 25+ $17.540	PDF RFQ	24 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	T-MAX-3	+ 150 C	Tube	625 W	Single	1.2 kV	3.3 V	113 A	100 nA	30 V
APT75GP120B2G	1+ $25.590 5+ $24.440 10+ $23.680 25+ $21.760	PDF RFQ	100 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	T-MAX-3	+ 150 C		1.042 kW	Single	1.2 kV	3.3 V	100 A	100 nA	30 V
APT45GP120J	1+ $37.280 2+ $36.260 5+ $35.260 10+ $34.250	PDF RFQ	13 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Screw	SOT-227-4	+ 150 C		329 W	N-Channel	1.2 kV	3.3 V	34 A	100 nA	+/- 20 V