- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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494
In-stock
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Infineon Technologies | IGBT Transistors RC-IGBT MONO DIODE 1600V 30A | Through Hole | TO-247-3 | + 175 C | Tube | 312 W | Single | 1600 V | 2.35 V | 60 A | 100 nA | 20 V | |||
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272
In-stock
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Infineon Technologies | IGBT Transistors RC-IGBT MONO DIODE 1600V 30A | Through Hole | TO-247-3 | + 175 C | Tube | 312 W | Single | 1600 V | 2.35 V | 60 A | 100 nA | 20 V | |||
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17
In-stock
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IXYS | IGBT Transistors 650V/60A XPT Copacked TO-268HV | Through Hole | TO-268HV-2 | + 175 C | Tube | 270 W | Single | 650 V | 2.35 V | 60 A | 100 nA | 30 V | |||
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39
In-stock
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IXYS | IGBT Transistors 650V/60A XPT C3 Copacked TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 270 W | Single | 650 V | 2.35 V | 60 A | 100 nA | 30 V | |||
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392
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 10-30 KHZ IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 370 W | Single | 600 V | 2.35 V | 78 A | 100 nA | +/- 20 V |
