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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4BC20WPBF
1+
$1.700
10+
$1.440
100+
$1.150
500+
$1.010
RFQ
1,886
In-stock
Infineon Technologies IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT Through Hole TO-220-3 + 150 C Tube 60 W Single 600 V 2.6 V 13 A 100 nA 20 V
IXGA30N60C3C1
1+
$14.890
10+
$13.690
25+
$13.120
100+
$11.560
RFQ
35
In-stock
IXYS IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A SMD/SMT TO-263-3 + 150 C Tube 220 W   600 V 2.6 V 60 A 100 nA +/- 20 V
IXGP30N60C3
1+
$2.780
10+
$2.370
100+
$2.050
250+
$1.950
RFQ
20
In-stock
IXYS IGBT Transistors 30 Amps 600V Through Hole TO-220AB-3 + 150 C Tube 220 W Single 600 V 2.6 V 60 A 100 nA +/- 20 V
NGTB30N135IHR1WG
1+
$4.770
10+
$4.050
100+
$3.520
250+
$3.340
RFQ
105
In-stock
onsemi IGBT Transistors 1350V/30A IGBT FSII Through Hole TO-247-3 + 175 C Tube 394 W Single 1.35 kV 2.6 V 60 A 100 nA +/- 25 V
IXGP30N60C3D4
1+
$3.580
10+
$3.040
100+
$2.640
250+
$2.500
RFQ
36
In-stock
IXYS IGBT Transistors 30 Amps 600V Through Hole TO-220AB-3 + 150 C Tube 220 W   600 V 2.6 V 60 A 100 nA +/- 20 V
NGTB30N60SWG
1+
$4.340
10+
$3.690
100+
$3.190
250+
$3.030
RFQ
202
In-stock
onsemi IGBT Transistors 600V/30A IGBT FSI TO-247 Through Hole TO-247-3 + 150 C Tube 189 W Single 600 V 2.6 V 60 A 100 nA 20 V
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