Build a global manufacturer and supplier trusted trading platform.
Packaging :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGY160T65SPD_F085
1+
$14.920
10+
$13.720
25+
$13.150
100+
$11.590
RFQ
417
In-stock
Fairchild Semiconductor IGBT Transistors 650V Field Stop Gen3 Trench IGBT Through Hole TO-247-3 + 175 C Tube 882 W Single 650 V 1.6 V 240 A +/- 250 nA +/- 20 V
STGB40H65FB
1+
$3.180
10+
$2.700
100+
$2.350
250+
$2.230
1000+
$1.680
RFQ
970
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar SMD/SMT D2PAK-3 + 175 C Reel 283 W Single 650 V 1.6 V 80 A +/- 250 nA +/- 20 V
STGWT40HP65FB
1+
$2.510
10+
$2.130
100+
$1.700
500+
$1.490
RFQ
569
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A... Through Hole TO-3P-3 + 175 C   283 W Single 650 V 1.6 V 80 A +/- 250 nA +/- 30 V
Default Photo
1+
$6.570
10+
$5.940
25+
$5.660
100+
$4.920
RFQ
600
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole   + 175 C   259 W Single 1200 V 2.5 V 30 A +/- 250 nA 20 V
Default Photo
1+
$6.670
10+
$6.030
25+
$5.750
100+
$4.990
RFQ
600
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole   + 175 C   259 W Single 1200 V 2.5 V 30 A +/- 250 nA 20 V
STGWA40H65DFB
1+
$4.070
10+
$3.460
100+
$3.000
250+
$2.850
RFQ
600
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A... Through Hole TO-247-3 + 175 C   283 W Single 650 V 1.6 V 80 A +/- 250 nA +/- 20 V
Page 1 / 1