- Manufacture :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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417
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V Field Stop Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.6 V | 240 A | +/- 250 nA | +/- 20 V | ||||
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496
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.8 V | 70 A | +/- 250 nA | +/- 20 V | ||||
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220
In-stock
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Fairchild Semiconductor | IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde | Through Hole | TO-247-3 | + 150 C | Tube | 390 W | Single | 1200 V | 2.45 V | 54 A | +/- 250 nA | +/- 20 V | ||||
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125
In-stock
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Fairchild Semiconductor | IGBT Transistors 300V PT N-Channel | Through Hole | TO-247-3 | + 150 C | Tube | 463 W | Single | 300 V | 1.3 V | 75 A | +/- 250 nA | +/- 20 V | ||||
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130
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT UFS Series | Through Hole | TO-247-3 | + 150 C | Tube | 208 W | Single | 600 V | 1.45 V | 60 A | +/- 250 nA | +/- 20 V | ||||
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59
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 892 W | Single | 650 V | 208 A | +/- 250 nA | +/- 30 V | ||||||
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203
In-stock
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Fairchild Semiconductor | IGBT Transistors 35A 1200V N-Ch | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 1200 V | 2.45 V | 17 A | +/- 250 nA | +/- 20 V | ||||
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395
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.8 V | 70 A | +/- 250 nA | +/- 20 V | ||||
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516
In-stock
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Fairchild Semiconductor | IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 1200 V | 2.1 V | 43 A | +/- 250 nA | +/- 20 V | ||||
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3,000
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 600 V | 1.7 V | 75 A | +/- 250 nA | +/- 20 V | ||||
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6,310
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 463 W | Single | 600 V | 1.8 V | 75 A | +/- 250 nA | +/- 20 V | ||||
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456
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V IGBT UFS N-Channel | Through Hole | TO-247-3 | + 150 C | Tube | 208 W | Single | 600 V | 1.45 V | 60 A | +/- 250 nA | +/- 20 V | ||||
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447
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 463 W | Single | 600 V | 1.8 V | 75 A | +/- 250 nA | +/- 20 V | ||||
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600
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A... | Through Hole | TO-247-3 | + 175 C | 283 W | Single | 650 V | 1.6 V | 80 A | +/- 250 nA | +/- 20 V | |||||
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25
In-stock
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Fairchild Semiconductor | IGBT Transistors 21a 1200V IGBT NPT Series N-Ch | Through Hole | TO-247-3 | + 150 C | Tube | 167 W | Single | 1200 V | 2.45 V | 21 A | +/- 250 nA | +/- 20 V |