- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
3,197
In-stock
|
Infineon Technologies | IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 1.36 V | 70 A | +/- 20 V | |||||
|
3,617
In-stock
|
IR / Infineon | IGBT Transistors 600V FAST 1-8 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 1.6 V | 70 A | +/- 20 V | |||||
|
496
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.8 V | 70 A | +/- 250 nA | +/- 20 V | ||||
|
239
In-stock
|
Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | Tube | 200 W | Single | 600 V | 1.6 V | 70 A | +/- 20 V | ||||||
|
53
In-stock
|
IXYS | IGBT Transistors GenX3 1200V XPT IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 577 W | Single | 1200 V | 3.6 V | 70 A | 100 nA | 30 V | ||||
|
85
In-stock
|
Infineon Technologies | IGBT Transistors Fast IGBT 300V 40A Ultra | Through Hole | TO-247-3 | Tube | 180 W | Single | 300 V | 1.7 V | 70 A | +/- 20 V | ||||||
|
423
In-stock
|
ROHM Semiconductor | IGBT Transistors 650V 40A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 234 W | 650 V | 1.65 V | 70 A | +/- 200 nA | +/- 30 V | |||||
|
210
In-stock
|
onsemi | IGBT Transistors 600V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
|
315
In-stock
|
ROHM Semiconductor | IGBT Transistors 650V 40A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 234 W | 650 V | 1.6 V | 70 A | +/- 200 nA | +/- 30 V | |||||
|
169
In-stock
|
onsemi | IGBT Transistors 650V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
|
30
In-stock
|
onsemi | IGBT Transistors 650V/35A FAST IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | +/- 20 V | ||||
|
395
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.8 V | 70 A | +/- 250 nA | +/- 20 V | ||||
|
VIEW | Infineon Technologies | IGBT Transistors 600V FAST 1-8 KHZ COPACK IGBT | Through Hole | TO-247-3 | Tube | 200 W | Single | 600 V | 1.6 V | 70 A | +/- 20 V | ||||||
|
VIEW | Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT UFS Series | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.4 V | 70 A | +/- 100 nA | +/- 20 V | ||||
|
16,800
In-stock
|
IR / Infineon | IGBT Transistors 300V 40A Ultra Fast | Through Hole | TO-247-3 | Tube | 160 W | Single | 300 V | 2.1 V | 70 A | +/- 20 V |