- Manufacture :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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423
In-stock
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ROHM Semiconductor | IGBT Transistors 650V 40A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 234 W | 650 V | 1.65 V | 70 A | +/- 200 nA | +/- 30 V | |||||
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315
In-stock
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ROHM Semiconductor | IGBT Transistors 650V 40A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 234 W | 650 V | 1.6 V | 70 A | +/- 200 nA | +/- 30 V | |||||
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169
In-stock
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onsemi | IGBT Transistors 650V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
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30
In-stock
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onsemi | IGBT Transistors 650V/35A FAST IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | +/- 20 V |