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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
RGT80TS65DGC11
1+
$3.680
10+
$3.130
100+
$2.720
250+
$2.580
RFQ
423
In-stock
ROHM Semiconductor IGBT Transistors 650V 40A IGBT Stop Trench Through Hole TO-247-3 + 175 C Tube 234 W   650 V 1.65 V 70 A +/- 200 nA +/- 30 V
RGTH80TS65DGC11
1+
$3.660
10+
$3.110
100+
$2.700
250+
$2.560
RFQ
315
In-stock
ROHM Semiconductor IGBT Transistors 650V 40A IGBT Stop Trench Through Hole TO-247-3 + 175 C Tube 234 W   650 V 1.6 V 70 A +/- 200 nA +/- 30 V
NGTB35N65FL2WG
1+
$2.970
10+
$2.520
100+
$2.190
250+
$2.080
RFQ
169
In-stock
onsemi IGBT Transistors 650V/35A FAST IGBT FSII T Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 2.2 V 70 A 200 nA 20 V
NGTG35N65FL2WG
1+
$3.710
10+
$3.150
100+
$2.740
250+
$2.600
RFQ
30
In-stock
onsemi IGBT Transistors 650V/35A FAST IGBT FSII Through Hole TO-247-3 + 175 C Tube 300 W Single 650 V 2.2 V 70 A 200 nA +/- 20 V
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