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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4IBC30WPBF
1+
$2.740
10+
$2.330
100+
$1.860
250+
$1.770
RFQ
371
In-stock
Infineon Technologies IGBT Transistors 600V Warp 60-150kHz Through Hole TO-220FP-3 + 150 C Tube 45 W Single 600 V 2.1 V 17 A 100 nA +/- 20 V
IRG4IBC30UDPBF
1+
$3.060
10+
$2.600
100+
$2.250
250+
$2.140
RFQ
209
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-220FP-3 + 150 C Tube 45 W Single 600 V 1.95 V 17 A 100 nA +/- 20 V
IRG4IBC30KDPBF
1+
$3.310
10+
$2.810
100+
$2.440
250+
$2.310
RFQ
5
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-25kHz Through Hole TO-220FP-3   Tube 45 W Single 600 V 2.7 V 17 A   +/- 20 V
HGTG10N120BND
1+
$4.160
10+
$3.540
100+
$3.070
250+
$2.910
RFQ
203
In-stock
Fairchild Semiconductor IGBT Transistors 35A 1200V N-Ch Through Hole TO-247-3 + 150 C Tube 298 W Single 1200 V 2.45 V 17 A +/- 250 nA +/- 20 V
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