- Manufacture :
- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,752
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A h... | Through Hole | TO-220-3 | + 175 C | 88 W | Single | 600 V | 1.5 V | 10 A | + / - 250 nA | +/- 20 V | |||||
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481
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 10A NPT IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 139 W | Single | 600 V | 2.3 V | 10 A | +/- 10 uA | +/- 20 V | ||||
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812
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/5A Field Stop Low Vcesat | Through Hole | TO-220-3 | + 125 C | Tube | 83 W | 600 V | 1.8 V | 10 A | 400 nA | 20 V |