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Package / Case :
Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IGW40N60TPXKSA1
1+
$3.420
10+
$2.910
100+
$2.520
250+
$2.390
RFQ
391
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 246 W Single 600 V 1.6 V 67 A 100 nA +/- 20 V
APT25GN120SG
1+
$8.820
10+
$7.940
25+
$7.230
50+
$6.740
RFQ
40
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... SMD/SMT D3PAK-3 + 150 C   272 W Single 1.2 kV 1.7 V 67 A 600 nA 30 V
IKW40N60DTPXKSA1
1+
$4.010
10+
$3.410
100+
$2.950
250+
$2.800
RFQ
246
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 246 W Single 600 V 1.6 V 67 A 100 nA +/- 20 V
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