IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRG4PSH71UDPBF	1+ $14.680 10+ $13.500 25+ $12.940 50+ $12.240		PDF RFQ	54 In-stock	Infineon Technologies	IGBT Transistors 1200V UltraFast 4-20kHz	Through Hole	TO-274-3	+ 150 C	Tube	350 W	Single	1.2 kV	2.52 V	99 A	100 nA	+/- 20 V
	IRG4PSH71UPBF	1+ $15.000 10+ $11.000 25+ $11.000 50+ $10.000		PDF RFQ	5,000 In-stock	IR / Infineon	IGBT Transistors 1200V UltraFast 8-40kHz	Through Hole	TO-274AA-3		Tube	350 W	Single	1.2 kV	2.7 V	99 A		+/- 20 V

IRG4PSH71UDPBF

IRG4PSH71UDPBF

Infineon Technologies

IGBT Transistors 1200V UltraFast 4-20kHz

Stock : 54

1+: $14.680

10+: $13.500

25+: $12.940

50+: $12.240

IRG4PSH71UPBF

IRG4PSH71UPBF

IR / Infineon

IGBT Transistors 1200V UltraFast 8-40kHz

Stock : 5,000

1+: $15.000

10+: $11.000

25+: $11.000

50+: $10.000

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