Build a global manufacturer and supplier trusted trading platform.
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG7PH50UPBF
1+
$10.910
10+
$9.860
25+
$9.400
50+
$8.760
RFQ
70
In-stock
Infineon Technologies IGBT Transistors 1200V 140A Through Hole TO-247-3 + 175 C Tube 556 W Single 1.2 kV 1.7 V 140 A 200 nA +/- 30 V
IRGP4266DPBF
1+
$10.630
10+
$9.610
25+
$9.160
50+
$8.530
RFQ
66
In-stock
Infineon Technologies IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT Through Hole TO-247AC-3 + 175 C Tube 455 W Single 650 V 1.7 V 140 A 100 nA 20 V
IRGP4266D-EPBF
1+
$10.750
10+
$9.720
25+
$9.260
50+
$8.630
RFQ
51
In-stock
IR / Infineon IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT Through Hole TO-247AD-3 + 175 C Tube 455 W Single 650 V 1.7 V 140 A 100 nA 20 V
Page 1 / 1