- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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70
In-stock
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Infineon Technologies | IGBT Transistors 1200V 140A | Through Hole | TO-247-3 | + 175 C | Tube | 556 W | Single | 1.2 kV | 1.7 V | 140 A | 200 nA | +/- 30 V | ||||
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66
In-stock
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Infineon Technologies | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | Through Hole | TO-247AC-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.7 V | 140 A | 100 nA | 20 V | ||||
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51
In-stock
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IR / Infineon | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | Through Hole | TO-247AD-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.7 V | 140 A | 100 nA | 20 V |