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Manufacture :
Packaging :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXGR16N170AH1
1+
$17.510
10+
$16.100
25+
$15.440
100+
$13.600
RFQ
176
In-stock
IXYS IGBT Transistors 8 Amps 1700V 5.2 Rds Through Hole ISOPLUS247-3 + 150 C Tube 120 W Single 1.7 kV 4.2 V 16 A 100 nA +/- 20 V
IXYH50N120C3D1
1+
$10.710
10+
$9.680
25+
$9.230
100+
$8.010
RFQ
180
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT Through Hole TO-247-3 + 150 C Tube 625 W Single 1200 V 4.2 V 90 A 100 nA 30 V
IXGR32N170AH1
1+
$23.930
5+
$23.690
10+
$22.080
25+
$21.090
RFQ
12
In-stock
IXYS IGBT Transistors 17 Amps 1700V 5.2 Rds Through Hole ISOPLUS247-3 + 150 C Tube 200 W Single 1.7 kV 4.2 V 26 A 100 nA +/- 20 V
IXGT16N170A
1+
$11.110
10+
$10.050
25+
$9.580
100+
$8.320
RFQ
7
In-stock
IXYS IGBT Transistors 32 Amps 1700 V 5 V Rds SMD/SMT TO-268-3 + 150 C Tube 190 W Single 1.7 kV 4.2 V 16 A 100 nA +/- 20 V
TIG065E8-TL-H
1+
$0.830
10+
$0.682
100+
$0.440
1000+
$0.352
3000+
$0.298
RFQ
4,627
In-stock
onsemi IGBT Transistors HIGH POWER SWITCHING SMD/SMT ECH-8 + 150 C Reel   Single Quad Collector Triple Emitter 400 V 4.2 V 150 A 10 uA +/- 4 V
IXGH16N170A
1+
$10.470
10+
$9.470
25+
$9.030
100+
$7.840
RFQ
30
In-stock
IXYS IGBT Transistors 32 Amps 1700 V 5 V Rds Through Hole TO-247-3 + 150 C Tube 190 W Single 1.7 kV 4.2 V 16 A 100 nA +/- 20 V
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