PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
STGW80H65DFB	1+ $7.140 10+ $6.460 25+ $6.160 100+ $5.340	PDF RFQ	273 In-stock	STMicroelectronics	IGBT Transistors Trench gte FieldStop IGBT 650V 80A	Through Hole	TO-247-3	+ 175 C	Tube	469 W	Single	650 V	1.6 V	120 A	250 nA	20 V
STGW80H65FB	1+ $7.140 10+ $6.460 25+ $6.160 100+ $5.340	PDF RFQ	195 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	469 W	Single	650 V	1.6 V	120 A	250 nA	20 V
STGWT80H65DFB	1+ $7.140 10+ $6.460 25+ $6.160 100+ $5.340	PDF RFQ	72 In-stock	STMicroelectronics	IGBT Transistors Trench gate H series 650V 80A HiSpd	Through Hole	TO-3P	+ 175 C	Tube	469 W	Single	650 V	1.6 V	120 A	250 nA	+/- 20 V
STGWT80H65FB	1+ $10.910 10+ $10.030 25+ $9.620 50+ $9.100	PDF RFQ	300 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-3P	+ 175 C	Tube	469 W	Single	650 V	1.6 V	120 A	250 nA	20 V
STGWA80H65FB	1+ $8.630 10+ $7.770 25+ $7.080 50+ $6.590	PDF RFQ	600 In-stock	STMicroelectronics	IGBT Transistors IGBT & Power Bipolar	Through Hole	TO-247-3	+ 175 C	Tube	469 W	Single	650 V	1.6 V	120 A	250 nA	20 V