- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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974
In-stock
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STMicroelectronics | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
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278
In-stock
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STMicroelectronics | IGBT Transistors 600V 60A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
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258
In-stock
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STMicroelectronics | IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | 20 V | ||||
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200
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.6 V | 50 A | 250 nA | +/- 20 V | ||||
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180
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.6 V | 50 A | 250 nA | +/- 20 V | ||||
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895
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS4 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 150 A | +/- 400 nA | +/- 20 V | ||||
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573
In-stock
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STMicroelectronics | IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
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495
In-stock
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STMicroelectronics | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
|
VIEW | STMicroelectronics | IGBT Transistors 600V 60A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | 20 V |