Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGWA25S120DF3
1+
$9.520
10+
$8.610
25+
$8.210
100+
$7.120
RFQ
200
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO247-3 + 175 C Tube 375 W Single 1.2 kV 1.6 V 50 A 250 nA +/- 20 V
STGW25S120DF3
1+
$8.570
10+
$7.750
25+
$7.390
100+
$6.410
RFQ
180
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO247-3 + 175 C Tube 375 W Single 1.2 kV 1.6 V 50 A 250 nA +/- 20 V
RGTH50TS65DGC11
1+
$3.150
10+
$2.680
100+
$2.330
250+
$2.210
RFQ
431
In-stock
ROHM Semiconductor IGBT Transistors 650V 25A IGBT Stop Trench Through Hole TO-247-3 + 175 C Tube 174 W   650 V 1.6 V 50 A +/- 200 nA +/- 30 V
RGTH50TS65GC11
1+
$2.860
10+
$2.430
100+
$2.110
250+
$2.000
RFQ
437
In-stock
ROHM Semiconductor IGBT Transistors 650V 25A IGBT Stop Trench Through Hole TO-247-3 + 175 C Tube 174 W   650 V 1.6 V 50 A +/- 200 nA +/- 30 V
Page 1 / 1