- Manufacture :
- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,853
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 1200 Volt 3 Amp | Through Hole | TO-220-3 FP | + 150 C | Tube | 25 W | Single | 1200 V | 2.8 V | 6 A | +/- 100 nA | +/- 20 V | ||||
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456
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | 415 W | Single | 600 V | 2.8 V | 93 A | 100 nA | 30 V | |||||
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97
In-stock
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IXYS | IGBT Transistors | Through Hole | TO-247-3 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | |||||
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40
In-stock
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IXYS | IGBT Transistors | Through Hole | ISOPLUS-i4-3 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 40 A | +/- 100 nA | +/- 20 V | |||||
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40
In-stock
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IXYS | IGBT Transistors | SMD/SMT | TO-268-2 | + 150 C | 160 W | Single | 3 kV | 2.8 V | 30 A | +/- 100 nA | +/- 20 V | |||||
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144
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Freq... | Through Hole | TO-247-3 | + 150 C | 415 W | Single | 600 V | 2.8 V | 93 A | 100 nA | 30 V | |||||
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VIEW | IXYS | IGBT Transistors 20 Amps 1200V | SMD/SMT | TO-263-3 | + 150 C | Reel | Single | 1200 V | 2.8 V | +/- 20 V |