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Packaging :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGF3NC120HD
1+
$1.690
10+
$1.440
100+
$1.150
500+
$1.010
RFQ
1,853
In-stock
STMicroelectronics IGBT Transistors N-Ch 1200 Volt 3 Amp Through Hole TO-220-3 FP + 150 C Tube 25 W Single 1200 V 2.8 V 6 A +/- 100 nA +/- 20 V
APT50GS60BRDQ2G
1+
$11.020
10+
$9.920
25+
$9.040
50+
$8.420
RFQ
456
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... Through Hole TO-247-3 + 150 C   415 W Single 600 V 2.8 V 93 A 100 nA 30 V
IXBH12N300
1+
$23.160
5+
$22.920
10+
$21.360
25+
$20.410
RFQ
97
In-stock
IXYS IGBT Transistors Through Hole TO-247-3 + 150 C   160 W Single 3 kV 2.8 V 30 A +/- 100 nA +/- 20 V
IXBF32N300
1+
$53.520
5+
$52.330
10+
$49.940
25+
$47.840
RFQ
40
In-stock
IXYS IGBT Transistors Through Hole ISOPLUS-i4-3 + 150 C   160 W Single 3 kV 2.8 V 40 A +/- 100 nA +/- 20 V
IXBT12N300HV
1+
$27.410
5+
$27.120
10+
$25.280
25+
$24.150
RFQ
40
In-stock
IXYS IGBT Transistors SMD/SMT TO-268-2 + 150 C   160 W Single 3 kV 2.8 V 30 A +/- 100 nA +/- 20 V
APT50GS60BRG
1+
$8.570
10+
$7.710
25+
$7.030
50+
$6.550
RFQ
144
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Freq... Through Hole TO-247-3 + 150 C   415 W Single 600 V 2.8 V 93 A 100 nA 30 V
IXDA20N120AS
1+
$6.260
10+
$5.660
25+
$5.400
100+
$4.690
800+
$3.560
VIEW
RFQ
IXYS IGBT Transistors 20 Amps 1200V SMD/SMT TO-263-3 + 150 C Reel   Single 1200 V 2.8 V     +/- 20 V
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