IGBT Transistors - Kaimeite

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3 products

PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT50GS60BRDQ2G	1+ $11.020 10+ $9.920 25+ $9.040 50+ $8.420	PDF RFQ	456 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ...	Through Hole	TO-247-3	+ 150 C	415 W	Single	600 V	2.8 V	93 A	100 nA	30 V
IXBH12N300	1+ $23.160 5+ $22.920 10+ $21.360 25+ $20.410	PDF RFQ	97 In-stock	IXYS	IGBT Transistors	Through Hole	TO-247-3	+ 150 C	160 W	Single	3 kV	2.8 V	30 A	+/- 100 nA	+/- 20 V
APT50GS60BRG	1+ $8.570 10+ $7.710 25+ $7.030 50+ $6.550	PDF RFQ	144 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Freq...	Through Hole	TO-247-3	+ 150 C	415 W	Single	600 V	2.8 V	93 A	100 nA	30 V