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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGF3NC120HD
1+
$1.690
10+
$1.440
100+
$1.150
500+
$1.010
RFQ
1,853
In-stock
STMicroelectronics IGBT Transistors N-Ch 1200 Volt 3 Amp Through Hole TO-220-3 FP + 150 C Tube 25 W Single 1200 V 2.8 V 6 A +/- 100 nA +/- 20 V
IRG4BC20KDPBF
1+
$2.210
10+
$1.880
100+
$1.500
500+
$1.310
RFQ
154
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-25kHz Through Hole TO-220-3   Tube 60 W Single 600 V 2.8 V 16 A   +/- 20 V
IRG4IBC20KDPBF
1+
$2.600
10+
$2.210
100+
$1.760
250+
$1.680
RFQ
500
In-stock
IR / Infineon IGBT Transistors 600V UltraFast 8-25kHz Through Hole TO-220FP-3   Tube 34 W Single 600 V 2.8 V 11.5 A   +/- 20 V
NGTB50N120FL2WAG
1+
$5.480
10+
$4.660
100+
$4.040
250+
$3.830
RFQ
30
In-stock
onsemi IGBT Transistors 1200V/50 FAST IGBT FSII T Through Hole TO-247-4 + 175 C Tube 268 W   1200 V 2.8 V 200 A 200 nA 20 V
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