PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
FGB20N60SFD	1+ $3.510 10+ $2.990 100+ $2.590 250+ $2.460 800+ $1.860	PDF RFQ	916 In-stock	Fairchild Semiconductor	IGBT Transistors 600V 20A Field Stop	Through Hole	TO-263AB		Reel	83 W		600 V	2.8 V	40 A	400 nA	20 V
APT50GS60BRDQ2G	1+ $11.020 10+ $9.920 25+ $9.040 50+ $8.420	PDF RFQ	456 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ...	Through Hole	TO-247-3	+ 150 C		415 W	Single	600 V	2.8 V	93 A	100 nA	30 V
IRG4BC20KDPBF	1+ $2.210 10+ $1.880 100+ $1.500 500+ $1.310	PDF RFQ	154 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 8-25kHz	Through Hole	TO-220-3		Tube	60 W	Single	600 V	2.8 V	16 A		+/- 20 V
APT50GS60BRG	1+ $8.570 10+ $7.710 25+ $7.030 50+ $6.550	PDF RFQ	144 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Freq...	Through Hole	TO-247-3	+ 150 C		415 W	Single	600 V	2.8 V	93 A	100 nA	30 V
IRG4IBC20KDPBF	1+ $2.600 10+ $2.210 100+ $1.760 250+ $1.680	PDF RFQ	500 In-stock	IR / Infineon	IGBT Transistors 600V UltraFast 8-25kHz	Through Hole	TO-220FP-3		Tube	34 W	Single	600 V	2.8 V	11.5 A		+/- 20 V