- Manufacture :
- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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2,910
In-stock
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Infineon Technologies | IGBT Transistors 600V 30A 187W | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 2.5 V | 60 A | 100 nA | 20 V | ||||
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11,800
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | 468 W | Single | 1.2 kV | 2.5 V | 80 A | 250 nA | 20 V | |||||
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2,400
In-stock
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Infineon Technologies | IGBT Transistors 600V 30A 187W | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 2.5 V | 60 A | 100 nA | 20 V | ||||
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61
In-stock
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Infineon Technologies | IGBT Transistors 600V 20A 170W | Through Hole | TO-247-3 | + 175 C | Tube | 170 W | Single | 600 V | 2.5 V | 40 A | 100 nA | 20 V | ||||
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40
In-stock
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IXYS | IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode | SMD/SMT | TO-263-3 | + 175 C | Tube | Single | 900 V | 2.5 V | 20 A | 100 nA | +/- 20 V | |||||
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96
In-stock
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IXYS | IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 | SMD/SMT | TO-252-3 | + 175 C | Tube | Single | 900 V | 2.5 V | 20 A | 100 nA | +/- 20 V | |||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 375 W | Single | 1200 V | 2.5 V | 50 A | 250 nA | 20 V | ||||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 375 W | Single | 1200 V | 2.5 V | 50 A | 250 nA | 20 V | ||||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 259 W | Single | 1200 V | 2.5 V | 30 A | +/- 250 nA | 20 V | ||||||
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600
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 259 W | Single | 1200 V | 2.5 V | 30 A | +/- 250 nA | 20 V | ||||||
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240
In-stock
|
Infineon Technologies | IGBT Transistors 600V 20A 170W | Through Hole | TO-247-3 | + 175 C | Tube | 170 W | Single | 600 V | 2.5 V | 40 A | 100 nA | 20 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 468 W | Single | 1200 V | 2.5 V | 80 A | 250 nA | +/- 20 V |