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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKW30N60H3
1+
$3.790
10+
$3.220
100+
$2.790
250+
$2.650
RFQ
2,910
In-stock
Infineon Technologies IGBT Transistors 600V 30A 187W Through Hole TO-247-3 + 175 C Tube 187 W Single 600 V 2.5 V 60 A 100 nA 20 V
K30H603
1+
$3.790
10+
$3.220
100+
$2.790
250+
$2.650
RFQ
2,400
In-stock
Infineon Technologies IGBT Transistors 600V 30A 187W Through Hole TO-247-3 + 175 C Tube 187 W Single 600 V 2.5 V 60 A 100 nA 20 V
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