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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGW35HF60W
1+
$2.990
10+
$2.540
100+
$2.200
250+
$2.090
RFQ
10,425
In-stock
STMicroelectronics IGBT Transistors Ultra Fast IGBT 35A 600V Through Hole TO-247 + 150 C Tube 200 W     2.5 V 60 A 100 nA 20 V
STGW35HF60WD
1+
$3.900
10+
$3.310
100+
$2.870
250+
$2.720
RFQ
475
In-stock
STMicroelectronics IGBT Transistors 35 A 600 V Ultra fast IGBT Through Hole TO-247 + 150 C Tube 200 W Single 600 V 2.5 V 60 A 0.1 uA +/- 20 V
NGTB20N120IHSWG
1+
$2.800
10+
$2.380
100+
$1.900
500+
$1.670
RFQ
190
In-stock
onsemi IGBT Transistors 1200/20A IGBT LPT TO-24 Through Hole TO-247 + 150 C Tube 156 W Single 1200 V 2.5 V 40 A 100 nA +/- 20 V
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