- Manufacture :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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145
In-stock
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IXYS | IGBT Transistors 50 Amps 1700V 3.3 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 1.7 kV | 2.5 V | 50 A | 100 nA | +/- 20 V | ||||
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12,000
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 30 Amp | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 2.5 V | 60 A | +/- 100 nA | +/- 20 V | ||||
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353
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-247-3 | Tube | 160 W | Single | 600 V | 2.5 V | 40 A | +/- 20 V | ||||||
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2,910
In-stock
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Infineon Technologies | IGBT Transistors 600V 30A 187W | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 2.5 V | 60 A | 100 nA | 20 V | ||||
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35
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 297 W | Single | 1.2 kV | 2.5 V | 52 A | 100 nA | 30 V | ||||
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28
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/105A | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 2.5 V | 105 A | 100 nA | 30 V | ||||
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11,800
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | 468 W | Single | 1.2 kV | 2.5 V | 80 A | 250 nA | 20 V | |||||
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54
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 500 W | Single | 1.2 kV | 2.5 V | 88 A | 250 nA | 30 V | |||||
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2,400
In-stock
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Infineon Technologies | IGBT Transistors 600V 30A 187W | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 2.5 V | 60 A | 100 nA | 20 V | ||||
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65
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | 337 W | Single | 900 V | 2.5 V | 78 A | 100 nA | 30 V | |||||
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61
In-stock
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Infineon Technologies | IGBT Transistors 600V 20A 170W | Through Hole | TO-247-3 | + 175 C | Tube | 170 W | Single | 600 V | 2.5 V | 40 A | 100 nA | 20 V | ||||
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31
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | 223 W | Single | 900 V | 2.5 V | 48 A | 100 nA | 30 V | |||||
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30,000
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 600 V | 2.5 V | +/- 100 nA | +/- 20 V | |||||
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240
In-stock
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Infineon Technologies | IGBT Transistors 600V 20A 170W | Through Hole | TO-247-3 | + 175 C | Tube | 170 W | Single | 600 V | 2.5 V | 40 A | 100 nA | 20 V | ||||
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12,000
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 30 Amp | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 2.5 V | 60 A | +/- 100 nA | +/- 20 V |