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Package / Case :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
APT33GF120BRG
1+
$10.370
10+
$9.330
25+
$8.500
50+
$7.920
RFQ
35
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... Through Hole TO-247-3 + 150 C Tube 297 W Single 1.2 kV 2.5 V 52 A 100 nA 30 V
IXYH50N120C3
1+
$11.380
10+
$10.280
25+
$9.800
100+
$8.510
RFQ
28
In-stock
IXYS IGBT Transistors XPT IGBT C3-Class 1200V/105A Through Hole TO-247-3 + 150 C Tube 625 W Single 1200 V 2.5 V 105 A 100 nA 30 V
APT40GR120B2D30
1+
$11.500
10+
$10.350
25+
$9.430
50+
$8.780
RFQ
54
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 Through Hole TO-247-3 + 150 C   500 W Single 1.2 kV 2.5 V 88 A 250 nA 30 V
APT64GA90LD30
1+
$12.450
10+
$11.320
25+
$10.470
50+
$9.900
RFQ
48
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-264-3 + 150 C Tube 500 W Single 900 V 2.5 V 117 A 100 nA 30 V
APT43GA90BD30
1+
$9.400
10+
$8.460
25+
$7.700
50+
$7.180
RFQ
65
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-247-3 + 150 C   337 W Single 900 V 2.5 V 78 A 100 nA 30 V
Default Photo
1+
$7.550
10+
$6.790
25+
$6.190
100+
$5.580
RFQ
31
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-247-3 + 150 C   223 W Single 900 V 2.5 V 48 A 100 nA 30 V
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