- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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11,800
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | 468 W | Single | 1.2 kV | 2.5 V | 80 A | 250 nA | 20 V | |||||
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437
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V, 40A Field Stop IGBT | Through Hole | TO-3PN | Tube | 349 W | 650 V | 2.5 V | 80 A | 400 nA | 20 V | ||||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 468 W | Single | 1200 V | 2.5 V | 80 A | 250 nA | +/- 20 V |