PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT64GA90LD30	1+ $12.450 10+ $11.320 25+ $10.470 50+ $9.900	PDF RFQ	48 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-264-3	+ 150 C	Tube	500 W	Single	900 V	2.5 V	117 A	100 nA	30 V
APT43GA90BD30	1+ $9.400 10+ $8.460 25+ $7.700 50+ $7.180	PDF RFQ	65 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C		337 W	Single	900 V	2.5 V	78 A	100 nA	30 V
IXYA8N90C3D1	1+ $3.900 10+ $3.310 100+ $2.870 250+ $2.720	PDF RFQ	40 In-stock	IXYS	IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode	SMD/SMT	TO-263-3	+ 175 C	Tube		Single	900 V	2.5 V	20 A	100 nA	+/- 20 V
IXYY8N90C3	1+ $1.830 10+ $1.550 100+ $1.240 500+ $1.090	PDF RFQ	96 In-stock	IXYS	IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3	SMD/SMT	TO-252-3	+ 175 C	Tube		Single	900 V	2.5 V	20 A	100 nA	+/- 20 V
APT27GA90BD15	1+ $7.550 10+ $6.790 25+ $6.190 100+ $5.580	PDF RFQ	31 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C		223 W	Single	900 V	2.5 V	48 A	100 nA	30 V