- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
75
In-stock
|
IXYS | IGBT Transistors 120 Amps 1200V | Through Hole | TO-264-3 | + 150 C | Tube | 830 W | Single | 1.2 kV | 1.85 V | 240 A | 400 nA | +/- 20 V | |||
|
|
98
In-stock
|
IXYS | IGBT Transistors 650V/200A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 830 W | Single | 650 V | 1.85 V | 200 A | 100 nA | 30 V | |||
|
|
24
In-stock
|
IXYS | IGBT Transistors 120 Amps 1200V | Through Hole | PLUS 247-3 | + 150 C | Tube | 830 W | Single | 1.2 kV | 1.85 V | 240 A | 400 nA | +/- 20 V |
