- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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452
In-stock
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IXYS | IGBT Transistors 650V/80A XPT Copacked TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 1.85 V | 80 A | 100 nA | 30 V | |||
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24
In-stock
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IXYS | IGBT Transistors 650V/80A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 1.85 V | 80 A | 100 nA | 30 V | |||
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152
In-stock
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onsemi | IGBT Transistors IGBT 600V 40A FS1 Solar/UPS | Through Hole | TO-247 | + 150 C | Tube | 257 W | Single | 600 V | 1.85 V | 80 A | 100 nA | 30 V | |||
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210
In-stock
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onsemi | IGBT Transistors 600V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 366 W | Single | 600 V | 1.85 V | 80 A | 200 nA | 20 V | |||
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640
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V 40A Field Stop Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 267 W | Single | 650 V | 1.85 V | 80 A | +/- 400 nA | +/- 20 V | |||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 468 W | Single | 1200 V | 1.85 V | 80 A | 250 nA | 20 V | |||
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288
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 468 W | Single | 1200 V | 1.85 V | 80 A | 250 nA | 20 V |
