Build a global manufacturer and supplier trusted trading platform.
Maximum Operating Temperature :
Packaging :
Pd - Power Dissipation :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGW30V60F
1+
$3.450
10+
$2.930
100+
$2.540
250+
$2.410
RFQ
501
In-stock
STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop Through Hole TO-247-3 + 175 C Tube 260 W Single 600 V 1.85 V 60 A 250 nA 20 V
STGB30V60F
1+
$2.800
10+
$2.380
100+
$1.900
500+
$1.670
1000+
$1.380
RFQ
968
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A ... SMD/SMT D2PAK-3 + 175 C Reel 260 W Single 600 V 1.85 V 60 A + / - 250 nA +/- 20 V
IRGP35B60PDPBF
1+
$5.000
10+
$4.000
25+
$4.000
100+
$4.000
RFQ
13,000
In-stock
Infineon Technologies IGBT Transistors 600V Warp2 150kHz Through Hole TO-247-3 + 150 C Tube 308 W Single 600 V 1.85 V 60 A 100 nA +/- 20 V
Default Photo
1+
$3.980
10+
$3.380
100+
$2.930
250+
$2.780
RFQ
600
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3PF + 175 C Tube 58 W Single 600 V 1.85 V 60 A 250 nA +/- 20 V
IRGP35B60PD-EP
4000+
$2.860
VIEW
RFQ
Infineon Technologies IGBT Transistors 600V WARP2 150KHZ COPACK IGBT Through Hole TO-247AD-3   Tube 308 W Single 600 V 1.85 V 60 A   +/- 20 V
STGB30V60DF
1+
$3.820
10+
$3.070
100+
$2.790
250+
$2.520
1000+
$1.900
RFQ
835
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar SMD/SMT D2PAK-3 + 175 C Reel 258 W Single 600 V 1.85 V 60 A 250 nA 20 V
Page 1 / 1